サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-05
Lifecycle StatusObsolete (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
関連部品
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説明
onsemi FQPF7N80Cの詳細は販売業者から提供されます。
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220F
onsemi N-Ch Enhancement MOSFET QFET Series Vds=800V 6.6A TO-220F TH 3-Pin
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220FP Tube
800 V N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 800V, 6.6A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.57ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V;
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)6.6 A
Current Rating6.6 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.9 Ω
Drain to Source Voltage (Vds)800 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.68 nF
Max Operating Temperature150 °C
Max Power Dissipation56 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation56 W
Rds On Max1.9 Ω
Rise Time100 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time50 ns
Turn-On Delay Time35 ns
Voltage Rating (DC)800 V
Dimensions
Height9.19 mm
Length10.16 mm
Width4.7 mm
コンプライアンス
環境分類
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
準拠ステートメント