サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-04-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13
関連部品
STMicroelectronicsSTP5NK50ZFP
N-channel 500 V, 1.22 Ohm typ., 4.4 A SuperMESH Power MOSFET in TO-220FP package
説明
onsemi FQPF5N50CFTUの詳細は販売業者から提供されます。
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220F T/R
Power Field-Effect Transistor, 5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CH 500V 5A TO220F
MOSFETs N-CH/500V/5A/QFET
500V N-Channel QFET® C-Series
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)5 A
Current Rating5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.55 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance625 pF
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation38 W
Rds On Max1.55 Ω
Rise Time46 ns
Turn-Off Delay Time50 ns
Voltage Rating (DC)500 V