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製造元 onsemi FQP6N90C のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
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サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-03-05
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-06-21
LTD Date2022-12-21
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
説明
onsemi FQP6N90Cの詳細は販売業者から提供されます。
Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-220
167W(Tc) 30V 5V@ 250¦ÌA 40nC@ 10 V 1N 900V 2.3¦¸@ 3A,10V 6A 1.77nF@25V TO-220-3 9.4mm
Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.93ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:167W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:2.3ohm; Package / Case:TO-220; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulse Current Idm:24A; Termination Type:Through Hole; Voltage Vds Typ:900V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)6 A
Current Rating6 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance2.3 Ω
Drain to Source Voltage (Vdss)900 V
Dual Supply Voltage900 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.77 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation167 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation167 W
Rds On Max2.3 Ω
Resistance2.3 Ω
Rise Time90 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time55 ns
Turn-On Delay Time35 ns
Voltage Rating (DC)900 V
Dimensions
Height20.4 mm
Length10.1 mm
コンプライアンス
環境分類
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
準拠ステートメント