サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-07-13
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
関連部品
STMicroelectronicsSTP5NK100Z
N-CHANNEL 1000V - 3 Ohm - 3.5A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
InfineonIPP90R1K2C3XKSA2
MOSFET N-CH 900V 5.1A TO220-3 N-Channel 900 V 5.1A (Tc) 83W (Tc) Through Hole PG-TO220-3
説明
onsemi FQP4N90の詳細は販売業者から提供されます。
Trans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) TO-220 Rail
Power Field-Effect Transistor, 4.2A I(D), 900V, 3.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
140W(Tc) 30V 5V@ 250µA 30nC@ 10V 1individualNChannel 900V 3.3Ω@ 2.1A,10V 4.2A 1.1nF@25V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:900V; Current, Id Cont:4.2A; Resistance, Rds On:3.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Alternate Case Style:SOT-78B; Current, Idm Pulse:16.8A; No. of Pins:3; Power Dissipation:140W; Power, Pd:140W; Resistance, Rds on Max:3.3ohm; Voltage, Vds Max:900V; Voltage, Vgs th Max:5V
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.2 A
Current Rating4.2 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance3.1 Ω
Drain to Source Voltage (Vdss)900 V
Dual Supply Voltage900 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.1 nF
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Power Dissipation140 W
Rds On Max3.3 Ω
Resistance3.3 Ω
Rise Time70 ns
Turn-Off Delay Time45 ns
Voltage Rating (DC)900 V