onsemi FQP4N80

Power Mosfet, N-channel, Qfet®, 800 V, 3.9 A, 3.6 Ω, TO-220
$ 0.913
EOL
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Rochester ElectronicsFQP4N80230
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FarnellFQP4N8001
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Microchip USAFQP4N80341150Tube
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Component Stockers USAFQP4N801,174
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IHS

Datasheet8ページ12年前
Datasheet0ページ0年前

Future Electronics

onsemi

Fairchild Semiconductor

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-10
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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説明

onsemi FQP4N80の詳細は販売業者から提供されます。

Power MOSFET, N-Channel, QFET®, 800 V, 3.9 A, 3.6 Ω, TO-220
onsemi
Transistor,mosfet,n-Channel,800V V(Br)Dss,3.9A I(D),to-220 Rohs Compliant: Yes |Onsemi FQP4N80
Newark
Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220AB Rail
Avnet
Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 13
Farnell
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

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