onsemi FQD7N20LTMの詳細は販売業者から提供されます。
N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 5.5 A, 750 mΩ, DPAK
Trans MOSFET N-CH 200V 5.5A 3-Pin(2+Tab) DPAK T/R
Avnet Japan
TAPE REEL/N-CH/LL/200V/5.5A/0.75OHM@VGS=10V/0.78OHM@VGS=5V
MOSFETs N-Channel QFET MOSFET 200V, 5.5A, 750mO
场效应管, MOSFET, N沟道, 200V, 5.5A, 150度 C, 45W;
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
POWER FIELD-EFFECT TRANSISTOR, 5
2.5W(Ta),45W(Tc) 20V 2V@ 250¦ÌA 9nC@ 5 V 1N 200V 750m¦¸@ 2.75A,10V 5.5A 500pF@25V TO-252AA 6.73mm*6.22mm*2.39mm
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.