関連部品
STMicroelectronicsSTD10NM50N
STMICROELECTRONICS STD10NM50N MOSFET Transistor, N Channel, 7 A, 500 V, 0.53 ohm, 10 V, 3 V
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説明
STMicroelectronics STD8NM60NDの詳細は販売業者から提供されます。
Mosfet Transistor, N Channel, 7 A, 600 V, 0.59 Ohm, 10 V, 4 V Rohs Compliant: Yes
N-channel 600 V, 0.59 Ohm, 7 A, FDmesh(TM) II Power MOSFET (with fast diode) DPAK
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R
MOSFET TRANSISTOR, N CHANNEL, 7 A, 600 V;
7 A 600 V 0.7 ohm N-CHANNEL Si POWER MOSFET TO-252
Power Field-Effect Transistor, 7A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance700 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance560 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation70 W
Rds On Max700 mΩ
Resistance700 mΩ
Rise Time22 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time37 ns
Turn-On Delay Time9 ns