サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2006-10-05
LTD Date2007-04-05
関連部品
onsemiSSR1N60BTM-WS
Power Field-Effect Transistor, 0.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
説明
onsemi FQD1N60TMの詳細は販売業者から提供されます。
MOSFET N-CH 600V 1A DPAK
Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N-CHANNEL POWER MOSFET
Not available to order .
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)1 A
Current Rating1 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance11.5 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance150 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max11.5 Ω
Rise Time25 ns
Turn-Off Delay Time7 ns
Voltage Rating (DC)600 V