サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2006-10-05
LTD Date2007-04-05
関連部品
InfineonIPD60R3K3C6ATMA1
MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R
説明
onsemi FQD2N60TFの詳細は販売業者から提供されます。
Trans MOSFET N-CH 600V 2A 3-Pin (2+Tab) TO-252 T/R
Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET N-CH 600V 2A DPAK
N-CHANNEL POWER MOSFET
MOSFETs & MOSFETs RF .
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance4.7 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max4.7 Ω
Rise Time25 ns
Turn-Off Delay Time20 ns
Voltage Rating (DC)600 V