onsemi FQA44N30

N-Channel Power MOSFET, QFET®, 300 V, 43.5 A, 69 mΩ, TO-3P
$ 2.883
Obsolete
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Rochester Electronics
2
FQA44N304,751
13h
Flip ElectronicsFQA44N301,147
2d
AvnetFQA44N300214
16h
FarnellFQA44N300450Tube
1h
Microchip USAFQA44N30233600Tray
2d

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Datasheet8ページ12年前
Datasheet0ページ0年前

onsemi

Fairchild Semiconductor

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iiiC

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-12
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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説明

onsemi FQA44N30の詳細は販売業者から提供されます。

N-Channel Power MOSFET, QFET®, 300 V, 43.5 A, 69 mΩ, TO-3P
onsemi
Trans MOSFET N-CH 300V 43.5A 3-Pin(3+Tab) TO-3PN Rail
Verical
Power Field-Effect Transistor, 43.5A I(D), 300V, 0.069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
RAIL / N-CH/300V/43.5A/0.069OHM
Newark
POWER FIELD-EFFECT TRANSISTOR, 4
Bettlink
onsemi NMOS QFET, Vds=300 V, 43 A, TO-3PN, , 3
UnikeyIC
300V 43.5A 55m´Î@10V21.75A 310W 5V@250uA 75pF@25V N Channel 4.35nF@25V 120nC@10V -55¡Í~+150¡Í@(Tj) TO-3 MOSFETs ROHS
Dasenic
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

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iiiC
Rochester Electronics

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