サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-05-04
Lifecycle StatusEOL (Last Updated: 1 day ago)
LTB Date2024-04-02
LTD Date2024-10-02
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
関連部品
onsemiFJD5304DTF
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
説明
onsemi FJD3305H1TMの詳細は販売業者から提供されます。
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin
Trans GP BJT NPN 400V 4A 1100mW 3-Pin(2+Tab) DPAK T/R
TAPE REEL/NPN HP BJT, 700V, 4A
POWER BIPOLAR TRANSISTOR, 4A, 40
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Collector Base Voltage (VCBO)700 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)400 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
Frequency4 MHz
Gain Bandwidth Product4 MHz
hFE Min8
Max Breakdown Voltage400 V
Max Collector Current4 A
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape & Reel
PolarityNPN
Power Dissipation1.1 W
Transition Frequency4 MHz