関連部品
onsemiFJD5304DTF
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
onsemiFJD3305H1TM
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin
説明
NXP Semiconductors BUJD103AD,118の詳細は販売業者から提供されます。
Power Bipolar Transistor, 4A I(C), 1-Element, NPN
Bipolar Transistors - BJT TRANS NPN 700V 4A
Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R
NPN POWER TRANSISTOR, 400 V, 4 A, 3-DPAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:80W; DC Collector Current:4A; DC Current Gain hFE:32; Operating Temperature Range:-65°C to +150°C ;RoHS Compliant: Yes
メーカーの別名
NXP Semiconductorsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 NXP Semiconductors は以下の名前でも知られているかもしれません：
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
技術仕様
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)700 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Voltage (VCEO)400 V
Element ConfigurationSingle
hFE Min10
Max Collector Current4 A
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityNPN
Power Dissipation80 W