onsemi FGP20N6S2

Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB
$ 0.567
Obsolete
データシート

価格と在庫

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DistributorSKUMinPkg
Verical
3
FGP20N6S2760494
Rochester ElectronicsFGP20N6S26,889
22h
Microchip USAFGP20N6S24163KTube
14h
Worldway ElectronicsFGP20N6S223,6627Tube
22h
SHENGYU ELECTRONICSFGP20N6S29,4241
2d

データシート & ドキュメント

onsemi FGP20N6S2のデータシートとメーカー資料をダウンロードする。

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Technical Drawing1ページ6年前

IHS

Farnell

DigiKey

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-03-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-01-03
LTD Date2008-07-03

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説明

onsemi FGP20N6S2の詳細は販売業者から提供されます。

Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IHS
TO-220, SINGLE, N-CHANNEL, 600V, SMPS II SERIES IGBT
Avnet
IGBT 600V 28A 125W TO220AB
DigiKey
IGBT 600V 28A TO-220-3
DigiKey Marketplace
IGBTs Sgl, N-Ch, 600V
Mouser
N-CHANNEL IGBT
Bettlink
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:28A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-220AB; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:40A; No. of Pins:3; Pin Format:GCE; Power, Pd:125W; Power, Ptot:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:50ns; Time, Rise:4.5ns; Transistors, No. of:1
Farnell

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Farnell
Rochester Electronics

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