onsemi FGH30N60LSDTU

Name: onsemi FGH30N60LSDTU
Brand: onsemi
SKU: FGH30N60LSDTU

FGH30N60LSD Series 600 V 60 A MOS Gated High Voltage IGBT Switching - TO-247

$ 7.24

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Distributor	SKU		Min
Rochester Electronics	FGH30N60LSDTU	452				3.330	2.980	2.810	17h
Flip Electronics	FGH30N60LSDTU	268							>1wk
Avnet	FGH30N60LSDTU	0	54			12.623	11.501	11.501	2d
Farnell	FGH30N60LSDTU	0	1	10.748*	10.748*	7.976*	6.875*	6.508*	17h
Component Stockers USA	FGH30N60LSDTU	47,002		3.960	3.960	3.730	3.370	3.370	5d

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onsemi FGH30N60LSDTUのデータシートとメーカー資料をダウンロードする。

IHS

Datasheet9ページ6年前

Datasheet9ページ12年前

Future Electronics

Fairchild Semiconductor

element14 APAC

iiiC

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サプライチェーン

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-08-06

Lifecycle StatusEOL (Last Updated: 1 day ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)

説明

onsemi FGH30N60LSDTUの詳細は販売業者から提供されます。

FGH30N60LSD Series 600 V 60 A MOS Gated High Voltage IGBT Switching - TO-247

Future Electronics

Trans IGBT Chip N=-CH 600V 60A 480000mW 3-Pin(3+Tab) TO-247 Tube

Verical

Using Fairchild's planar technology, the FGH30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor.

Fairchild Semiconductor

IGBT,N CH,FAST,W/DIO,600V,60A,TO247; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:480W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:480W

Farnell