サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-06-02
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 weeks ago)
関連部品
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STGP30M65DF2: 650 V 60 A 258 W Trench Gate Field-Stop IGBT - TO-220AB
説明
onsemi FGA6530WDFの詳細は販売業者から提供されます。
FGA6530WDF for FS3 650V SHD prolferation - 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
Trans IGBT Chip N-CH 650V 60A 176000mW 3-Pin(3+Tab) TO-3P Tube
IGBT, 650 V, 30 A Field Stop Trench
IGBT 650V 30A FIELD STOP TO3PN
Insulated Gate Bipolar Transistor
176W 1.8V 650V 60A TO-3PN 18.9mm
FAST & ULTRAFAST RECOVERY RECTIFIERS;
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance only for welder application where low conduction and switching losses are essential.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Max Collector Current60 A
Max Operating Temperature175 °C
Max Power Dissipation176 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time81 ns