サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-19
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
関連部品
説明
onsemi FGA30T65SHDの詳細は販売業者から提供されます。
Trans IGBT Chip N=-CH 650V 60A 238000mW 3-Pin(3+Tab) TO-3PN Rail
INSULATED GATE BIPOLAR TRANSISTO / IGBT Trench Field Stop 650 V 60 A 238 W Through Hole TO-3PN
FIELD STOP TRENCH IGBT, 650V/60A, TO-3PN; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 238W; Collector Emitter Voltage V(br)ceo: 6; Available until stocks are exhausted
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
MountThrough Hole
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)650 V
Max Collector Current60 A
Max Operating Temperature175 °C
Max Power Dissipation238 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time31.8 ns
Schedule B8541290080