サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-22
Lifecycle StatusProduction (Last Updated: 3 months ago)
LTB Date2011-03-02
LTD Date2011-09-02
関連部品
onsemiNTD4805N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 12.7A Ta 95A Tc 95A 2.24W 8ns
説明
onsemi FDU8874の詳細は販売業者から提供されます。
Trans MOSFET N-CH 30V 18A 3-Pin(3+Tab) IPAK Tube
MOSFETs 30V,116A,5.1OHM,NCH PWR TRENCH MOSFET
30V,116A,5.1 OHM, NCH, IPAK, POWER TRENCH MOSFET
110W(Tc) 2.5V@ 250µA 72nC@ 10V 1individualNChannel 30V 5.1mΩ@ 35A,10V 2.99pF@15V IPAK Through hole mounting
Power Field-Effect Transistor, 35A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)18 A
Current Rating116 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.99 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingRail/Tube
Power Dissipation110 W
Rds On Max5.1 mΩ
Rise Time96 ns
Turn-Off Delay Time47 ns
Voltage Rating (DC)30 V