関連部品
onsemiNTD4855N-1G
Tube Through Hole N-Channel Single Mosfet Transistor 14A Ta 98A Tc 17.7A 2.24W 4.35ns
onsemiNTD4855N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 14A Ta 98A Tc 17.7A 2.24W 4.35ns
onsemiNTD110N02R-001
Tube Through Hole N-Channel Single Mosfet Transistor 12.5A Ta 110A Tc 110A 2.88W 21ns
説明
onsemi NTD4805N-35Gの詳細は販売業者から提供されます。
Tube Through Hole N-Channel Single Mosfet Transistor 12.7A Ta 95A Tc 95A 2.24W 8ns
MOSFETs- Power and Small Signal NFET 30V 88A 5MOHM
Trans MOSFET N-CH 30V 17.4A 3-Pin(3+Tab) IPAK Tube
12.6 A 30 V 0.0074 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 12.6A I(D), 30V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 12.7A/95A IPAK
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:88A; On Resistance, Rds(on):5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)12.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.865 nF
Max Operating Temperature175 °C
Max Power Dissipation1.41 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.24 W
Rds On Max5 mΩ
Rise Time20.3 ns
Turn-Off Delay Time20.8 ns