サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-06-09
Lifecycle StatusProduction (Last Updated: 2 months ago)
LTB Date2006-04-06
LTD Date2006-10-06
関連部品
onsemiNTD4809NA-35G
Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 9.6A Ta 58A Tc 11.5A 2W 30V
onsemiNTD4809NA-1G
Tube Through Hole N-Channel Single Mosfet Transistor 9.6A Ta 58A Tc 11.5A 2W 2.3ns
STMicroelectronicsSTD17NF03L-1
N-channel 30 V, 0.038 Ohm typ., 17 A STripFET II Power MOSFET in IPAK package
onsemiNTD4806NA-1G
Tube Through Hole N-Channel Single Mosfet Transistor 11.3A Ta 79A Tc 14A 2.14W 4.7ns
説明
onsemi FDU6296の詳細は販売業者から提供されます。
15 A, 30 V, 0.0088 Ohm, N-Channel, Si, Power, Mosfet, To-251Aa
Trans MOSFET N-CH 30V 15A 3-Pin(3+Tab) TO-251 Tube
MOSFETs 30V N-Ch PowerTrench Fast Switching
Power Field-Effect Transistor, 15A I(D), 30V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
3.8W(Ta)，52W(Tc) 3V@ 250µA 31.5nC@ 10V 1individualNChannel 30V 8.8mΩ@ 15A,10V 1.44pF@15V IPAK Through hole mounting
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)15 A
Current Rating50 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.44 nF
Max Operating Temperature175 °C
Max Power Dissipation52 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max8.8 mΩ
Rise Time6 ns
Turn-Off Delay Time29 ns
Voltage Rating (DC)30 V