価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDS9933BZ | 2,500 | 561 | |||||||||
| Rochester Electronics | FDS9933BZ | 11,107 | 12h | |||||||||
| Microchip USA | FDS9933BZ | 348 | 600 | Tray | 5h | |||||||
| Win Source | WS-FDS9933BZ | 25,300 | 90 | 13h | ||||||||
| ICPartonline | FDS9933BZ | 31,633 | 2d |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-03-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-11-24
LTD Date2013-05-24
関連部品
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MOSFET, Power;Dual P-Ch;VDSS -20V;RDS(ON) 0.058Ohm;ID -5.3A;SO-8;PD 2W;VGS +/-12
InfineonIRF7301PBF
Transistor: 2xN-MOSFET; unipolar; 20V; 5.2A; 0.05ohm; 2W; -55+150 deg.C; SMD; SO8
説明
onsemi FDS9933BZの詳細は販売業者から提供されます。
Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
-20V Dual P-Channel 2.5V Specified PowerTrench® MOSFET
Power Field-Effect Transistor, 4.9A I(D), 20V, 0.046ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
TAPE REEL / DUAL P-CH POWER TRENCH MOSFET
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)4.9 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance46 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time9.3 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance985 pF
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
Power Dissipation1.6 W
Rds On Max46 mΩ
Rise Time9.3 ns
Turn-Off Delay Time59 ns