サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-18
Lifecycle StatusObsolete (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
関連部品
InfineonIRF7306TRPBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
InfineonIRF7326D2TRPBF
MOSFET P-CH 30V 3.6A 8SO P-Channel 30 V 3.6A (Ta) 2W (Ta) Surface Mount 8-SO
説明
onsemi FDS9400Aの詳細は販売業者から提供されます。
P-Channel 30 V 130 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
P-Channel PowerTrench® MOSFET, 30V, -3.4A, 130mΩ
Trans MOSFET P-CH 30V 3.4A 8-Pin SOIC N T/R
2.5W(Ta) 25V 3V@ 250µA 3.5nC@ 5V 1individualPChannel 30V 130mΩ@ 1A,10V 3.4A 205pF@15V SOIC-8 SMD mount 4.9mm*3.9mm*1.75mm
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
MOSFET, P CH, -30V, -3.4A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)3.4 A
Current Rating-3.4 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance205 pF
Max Operating Temperature175 °C
Max Power Dissipation1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Elements1
Power Dissipation2.5 W
Rds On Max130 mΩ
Resistance130 MΩ
Rise Time12.5 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time11 ns
Turn-On Delay Time4.5 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.575 mm
Length4.9 mm
Width3.9 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
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