onsemi FDS6986AS

Transistor MOSFET Array Dual N-CH 30V 6.5A/7.9A 8-Pin SOIC T/R

MOSFET, DUAL N-CH, 30V, 7.9A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7.9A; Source Voltage Vds:30V; On

MOSFET, DUAL, N, SMD, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6.5A; Resistance, Rds On:29mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:6.5A; Current, Id Cont N Channel 3:7.9A; Current, Idm Pulse N Channel 2:20A; Current, Idm Pulse N Channel 3:30A; No. of Pins:8; Power Dissipation:2W; Resistance, Rds on N Channel 1:0.020ohm; Resistance, Rds on N Channel 2:0.029ohm; Transistors, No. of:1; Voltage, Vds Max:30V

The FDS6986AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two unique 30V, N-channel, logic level, PowerTrenchMOSFETs designed to maximize power conversion efficiency.The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conductionlosses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.