onsemi FDS2672

N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

N-Channel 200 V 70 mOhm UltraFET Trench® Mosfet - SOIC-8

Power MOSFET, N Channel, 200 V, 3.9 A, 0.07 ohm, SOIC, Surface Mount

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3.9A; On Resistance, Rds(on):0.07ohm; Rds(on) Test Voltage, Vgs:2.9V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes

This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

MOSFET, N, SO-8; Transistor Polarity:N; Max Current Id:3.9A; Max Voltage Vds:200V; On State Resistance:0.07ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:Cobalt dichloride; Avalanche Single Pulse Energy Eas:37.5mJ; Case Style:SOIC; Cont Current Id:3.9A; Max On State Resistance:0.07ohm; Max Voltage Vgs th:4V; Min Voltage Vgs th:2V; Pin Configuration:D(5,6,7,8), S(1,2,3), G(4); Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Termination Type:SMD; Transistor Type:MOSFET; Typ Capacitance Ciss:1905pF; Typ Voltage Vds:200V; Typ Voltage Vgs th:2.9V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)