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製造元 onsemi FDPF51N25 のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
| ソース | eCAD | mCAD | ファイル |
|---|---|---|---|
 EE Concierge | シンボルフットプリント | ||
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代替部品
Price @ 1000
$ 1.18
$ 0.919
Stock
240,036
77,042
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220-3
Drain to Source Voltage (Vdss)
250 V
250 V
Continuous Drain Current (ID)
28 A
51 A
Threshold Voltage
5 V
-
Rds On Max
60 mΩ
60 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
320 W
38 W
Input Capacitance
3.41 nF
3.41 nF
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-09-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
関連部品
InfineonIRFI4229PBF
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB Full-Pak package
説明
onsemi FDPF51N25の詳細は販売業者から提供されます。
N-Channel Power MOSFET, UniFETTM, 250V, 51A, 60mΩ, TO-220F
N-Channel 250 V 60 mOhm Flange Mount Mosfet - TO-220F
Power Field-Effect Transistor, 28A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
MOSFET,N CH,250V,28A,TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:250V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:117W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:3620pF; Current Id Max:28A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.07°C/W; On State Resistance Max:60mohm; On State Resistance Typ:48mohm; Package / Case:TO-220F; Pin Configuration:G(1),D(2),S(3); Power Dissipation Pd:117W; Power Dissipation Pd:117W; Pulse Current Idm:112A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)28 A
Current Rating28 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)250 V
Dual Supply Voltage250 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.41 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation117 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation320 W
Rds On Max60 mΩ
Resistance60 MΩ
Rise Time465 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time98 ns
Turn-On Delay Time62 ns
Voltage Rating (DC)250 V
Dimensions
Height19.5 mm
Length10.36 mm
Width4.9 mm