サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2020-11-13
LTD Date2021-05-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 weeks ago)
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説明
onsemi FDP8030Lの詳細は販売業者から提供されます。
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 80A, 35mΩ
Power Field-Effect Transistor, 80A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CHANNEL MOSFET, 30V, 80A, TO-220; Tran; N CHANNEL MOSFET, 30V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; MSL:-
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time200 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.5 nF
Max Operating Temperature175 °C
Max Power Dissipation187 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.5 V
Number of Elements1
Power Dissipation187 W
Rds On Max3.5 mΩ
Rise Time185 ns
Threshold Voltage1.5 V
Turn-Off Delay Time160 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)30 V