サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-11-10
LTD Date2013-05-10
関連部品
STMicroelectronicsSTP90NF03L
N-Channel 30V - 0.0056Ohm - 90A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
STMicroelectronicsSTP75N3LLH6
N-channel 30 V, 0.0042 Ohm, 75 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET
説明
STMicroelectronics STP150N3LLH6の詳細は販売業者から提供されます。
N-channel 30 V, 0.0024 Ohm, 80 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
N CH POWER MOSFET, 30V, 80A, TO-220
Power Field-Effect Transistor, 80A I(D), 30V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.04 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max3.3 mΩ
Resistance3.3 MΩ
Rise Time18 ns
Schedule B8541290080
Turn-Off Delay Time75 ns