onsemi FDMS5672

N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ

onsemi N-Ch Enhanced MOSFET UltraFET, Vds=60V 10.6A MLP8 SMD 8-Pin

Trans MOSFET N-CH Si 60V 10.6A 8-Pin Power 56 T/R

MOSFET 60V N-ChUltraFET PowerTrench MOSFET

Power Field-Effect Transistor, 10.6A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Fet 60V 11.5 Mohm Mlp Rohs Compliant: Yes

MOSFET N-CH 60V 10.6A/22A 8MLP

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:10.6A; Package / Case:Power 56; Power Dissipation Pd:2.5W; Pulse Current Idm:60A; SMD Marking:FDMS5672; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3.2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V