サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-09-11
LTD Date2014-03-11
関連部品
onsemiFDMS8570SDC
FAIRCHILD SEMICONDUCTOR FDMS8570SDC MOSFET Transistor, N Channel, 60 A, 25 V, 0.0021 ohm, 10 V, 1.5 V
VishaySIR818DP-T1-GE3
Single N-Channel 30 V 0.0028 Ohm 69 W Surface Mount Power Mosfet - PowerPAK-SO-8
説明
onsemi FDMS2510SDCの詳細は販売業者から提供されます。
Transistor MOSFET Array Dual N-Channel 25V 28A 8-Pin Power 56 T/R
Power Field-Effect Transistor, 28A I(D), 25V, 0.0029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
N CH MOSFET, 25V, 28A, 8-PWR56; Transist; N CH MOSFET, 25V, 28A, 8-PWR56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; No. of Pins:8
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance2.9 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.78 nF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Elements2
Power Dissipation60 W
Rds On Max2.9 mΩ
Rise Time4 ns
Turn-Off Delay Time27 ns
Turn-On Delay Time10 ns