onsemi FDMS8023S

Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R
$ 0.525
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Verical
3
FDMS8023S1,664646
Rochester Electronics
2
FDMS8023S26,840
1h
DigiKey
2
FDMS8023SCT-ND1,6331Cut Tape
NewarkFDMS8023S03KTape & Reel
Onlinecomponents.comFDMS8023S0750Bulk

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Master Electronics

Datasheet0ページ0年前

IHS

element14 APAC

onsemi

Fairchild Semiconductor

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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説明

onsemi FDMS8023Sの詳細は販売業者から提供されます。

Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R
Verical
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
IHS
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Farnell
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
Fairchild Semiconductor

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Rochester Electronics
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