onsemi FDMC86160の詳細は販売業者から提供されます。
MOSFET, N-CH, 100V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curre
N-Channel Power Trench MOSFET 100 V, 43 A, 14 m Ohm | MOSFET N CH 100V 9A POWER33
ON SEMICONDUCTOR - FDMC86160 - MOSFET Transistor, N Channel, 43 A, 100 V, 0.0112 ohm, 10 V, 2.9 V
N-Channel Power Trench® MOSFET 100V, 43A, 14mΩ
Power Field-Effect Transistor, 9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
2.3W(Ta),54W(Tc) 20V 4V@ 250µA 22nC@ 10 V 1individualNChannel 100V 14mΩ@ 9A,10V 9A,43A 1.29nF@50V SMD mount 3.3mm*3.3mm*800μm
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low RDS(on) is required in small spaces such as High performance VRM, POL and orring functions.
MOSFET, N-CH, 100V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0112ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:54W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C