サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-12-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-09-14
LTD Date2012-03-14
説明
onsemi FDJ1027Pの詳細は販売業者から提供されます。
Trans MOSFET P-CH 20V 2.8A 6-Pin SC-75 T/R
-20V P-Channel 1.8V Specified PowerTrench® MOSFET
Power Field-Effect Transistor, 2.8A I(D), 20V, 0.16ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs 1.8 V,P-CH, PowerTrench MOSFET
1.8 V,P-CH, SC-75 FLMP, SPECIFIED POWER TRENCH MOSF<AZ
MOSFET P CH -20V -2.8A FLMP SC-75; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-800mV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-75; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.8A; Package / Case:SC-75; Power Dissipation Pd:1.5W; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-800mV; Voltage Vgs Rds on Measurement:-4.5V
This dual P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight96 mg
Technical
Continuous Drain Current (ID)2.8 A
Current Rating-2.8 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance160 mΩ
Dual Supply Voltage-20 V
Element ConfigurationDual
Fall Time13 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance290 pF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-800 mV
Number of Elements2
PackagingTape & Reel (TR)
Power Dissipation1.5 W
Rds On Max160 mΩ
Rise Time13 ns
TerminationSMD/SMT
Turn-Off Delay Time13 ns
Voltage Rating (DC)-20 V