サプライチェーン
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-01-03
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2020-11-13
LTD Date2021-05-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
説明
onsemi FDG311Nの詳細は販売業者から提供されます。
N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ
20V N-Fet 130 Mo To220 Rohs Compliant: Yes
Trans MOSFET N-CH 20V 1.9A 6-Pin SC-88 T/R
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)1.9 A
Current Rating1.9 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance105 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance270 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs900 mV
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation480 mW
Rds On Max115 mΩ
Rise Time9 ns
Schedule B8541210080
Threshold Voltage900 mV
Turn-Off Delay Time10 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)20 V
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
準拠ステートメント