onsemi FDFS2P106A

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode, -60V, -3.0 A, 110 mΩ

Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3A; On Resistance Rds(On):0.091Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes

MOSFET, P, SCHOTTKY, SMD, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:-1.6V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:-10A; Forward Current If(AV):2mA; Forward Voltage VF Max:0.62V; Package / Case:SOIC; Power Dissipation Pd:2mW; Termination Type:SMD; Voltage Vds Typ:-60V; Voltage Vgs Max:-1.6V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-3V

The FDFS2P106A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.