サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-01
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2008-12-02
LTD Date2009-06-02
関連部品
Diodes Inc.DMP3065LVT-7
DMP Series 30 V 42 mOhm 1.6 W SMT P-Channel Enhancement Mode Mosfet - TSOT-26
Diodes Inc.DMP3105LVT-7
Mosfet, P-Ch, 30V, 3.1A, Tsot-26 Rohs Compliant: Yes |Diodes Inc. DMP3105LVT-7
説明
onsemi FDC633Nの詳細は販売業者から提供されます。
30V N-Channel Enhancement Mode Field Effect Transistor
Power Field-Effect Transistor, 5.2A I(D), 30V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
1.6W(Ta) 8V 1V@ 250¦ÌA 16nC@ 4.5V 1N 30V 42m¦¸@ 5.2A,4.5V 5.2A 538pF@10V SSOT-6 2.9mm*1.6mm*1.1mm
MOSFET N-CH 30V 5.2A SUPERSOT6
30V N-CH. FET, 42 MO, SSOT6 <AZ
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.2A; On Resistance, Rds(on):0.42ohm; Rds(on) Test Voltage, Vgs:4.5V; Drain-Source Breakdown Voltage:30V RoHS Compliant: Yes
MOSFET, N, SMD, SSOT-6; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:5.2A; Resistance, Rds On:0.042ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.67V; Case Style:SuperSOT-6; Termination Type:SMD
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)5.2 A
Current Rating5.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time17 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance538 pF
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation1.6 W
Rds On Max42 mΩ
Rise Time17 ns
Turn-Off Delay Time25 ns
Voltage Rating (DC)30 V