価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FDB86360-F085 | 7,880 | 6h | |||||||||
| DigiKey | FDB86360-F085CT-ND | 261 | 1 | Cut Tape | ||||||||
| Farnell | FDB86360-F085 | 0 | 800 | Tape & Reel | 1d | |||||||
| Mouser | 512-FDB86360_F085 | 3,420 | 1 | Tape & Reel | ||||||||
| Microchip USA | FDB86360-F085 | 1,570 | 300 | 22h |
サプライチェーン
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-12-21
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2023-09-30
LTD Date2024-03-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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説明
onsemi FDB86360-F085の詳細は販売業者から提供されます。
FDB86360 Series 80 V 110 A 1.8 mOhm N-Ch Power Trench Mosfet - D²PAK (TO-263AB)
Trans MOSFET N-CH 80V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
N-Channel PowerTrench® MOSFET, 80V, 110A, 1.8 mΩ
TAPE REEL / N-channel PowerTrench MOSFET
Power Field-Effect Transistor, 110A I(D), 80V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
80V 110A 1.5m´Î@10V80A 333W 3V@250uA 370pF@25V N Channel 14.6nF@25V 207nC@0~10V -55¡Í~+175¡Í@(Tj) TO-263 MOSFETs ROHS
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance1.8 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance14.6 nF
Max Operating Temperature175 °C
Max Power Dissipation333 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max1.8 mΩ
Rise Time197 ns
Turn-Off Delay Time86 ns
Turn-On Delay Time75 ns