onsemi FCP850N80Z

N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, TO-220

MOSFET N-CH 800V 8A TO220-3 / N-Channel 800 V 8A (Tc) 136W (Tc) Through Hole TO-220-3

Power Field-Effect Transistor, 8A I(D), 800V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

136W(Tc) 20V 4.5V@ 600¦ÌA 29nC@ 10V 1individualNChannel 800V 850m¦¸@ 3A,10V 8A 1.315nF@100V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm

Mosfet, N-Ch, 800V, 8A, To-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.71Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes |Onsemi FCP850N80Z

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications.