onsemi FCP650N80Z

N-Channel Power MOSFET, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220

Mosfet, N-Ch, 800V, 10A, To-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.53Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes |Onsemi FCP650N80Z

162W(Tc) 20V 4.5V@ 800µA 35nC@ 10 V 1individualNChannel 800V 650mΩ@ 4A,10V 10A 1.565nF@100V TO-220 Through hole mounting 10.67mm*4.7mm*16.3mm

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications.