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製造元 onsemi FCH47N60NF のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
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サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-12-29
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
関連部品
STMicroelectronicsSTW55NM60ND
Mosfet Transistor, N Channel, 51 A, 600 V, 0.047 Ohm, 10 V, 4 V Rohs Compliant: Yes
InfineonIPW60R070P6XKSA1
600V, 0.07OHM, N-CHANNEL MOSFET, / N-Channel 600 V 53.5A (Tc) 391W (Tc) Through Hole PG-TO247-3
STMicroelectronicsSTW56N65DM2
N-channel 650 V, 0.052 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package
説明
onsemi FCH47N60NFの詳細は販売業者から提供されます。
N-Channel Power MOSFET, SUPREMOS®, FRFET®, 600 V, 45.8 A, 65 mΩ, TO-247
Power Field-Effect Transistor, 45.8A I(D), 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
MOSFET, N CH, 600V, 45.8A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:45.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0575ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:368W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Continuous Drain Current (ID)45.8 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance6.12 nF
Max Operating Temperature150 °C
Max Power Dissipation368 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingRail/Tube
Power Dissipation368 W
Rds On Max65 mΩ
Rise Time22 ns
Threshold Voltage3 V
Turn-Off Delay Time117 ns
Turn-On Delay Time34 ns
Dimensions
Height20.82 mm
Length15.87 mm
Width4.82 mm