サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-12-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
関連部品
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MOSFET N-CH 800V 1.9A TO252-3 / N-Channel 800 V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3
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42KW 20V 3.9V 9nC@ 10V 2N 800V 2.7¦¸@ 10V 2A 290pF@ 25V TO-252 6.5mm*622cm*2.51mm
説明
onsemi FCD2250N80Zの詳細は販売業者から提供されます。
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, DPAK
Trans MOSFET N-CH 800V 2.6A 3-Pin(2+Tab) DPAK T/R
TAPE REEL / SuperFET2 800V 2250mOhm Zener
场效应管, MOSFET, N沟道, 800V, 2.6A, 150度 C, 39W;
MOSFET, N-CH, 800V, 2.6A, 150DEG C, 39W;
39W(Tc) 20V 4.5V@ 260¦ÌA 14nC@ 10 V 1N 800V 2.25¦¸@ 1.3A,10V 2.6A 585pF@100V TO-252AA 6.73mm*6.22mm*2.39mm
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance2.25 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time8.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance585 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation39 W
Rds On Max2.25 Ω
Resistance2.25 Ω
Rise Time6.7 ns
Schedule B8541290080
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Dimensions
Height2.517 mm