onsemi DTC114EET1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

NPN Bipolar Digital Transistor (BRT)

DTC Series 50 V 100 mA 10 kOhm NPN Silicon Bias Resistor Transistor - SC-75

DTC114EET1G NPN DIGI TRANSISTOR, 100MA 50 V 10 KOHM, RATIO OF 1, 3-PIN SOT-416

35@5mA,10V 1 NPN - Pre Biased 200mW 100mA 50V 500nA SOT-523(SC-75) Digital Transistors ROHS

Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R

Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN

Bias Resistor Transistor, Npn, 50V, Full Reel; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes |Onsemi DTC114EET1G.

BIAS Resistor Transistor, NPN, 50V; COLL; BIAS Resistor Transistor, NPN, 50V; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-416

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.