onsemi DTA143ZET1G

Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R / TRANS PREBIAS PNP 200MW SC75

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

DTA143ZE Series 50 V 100 mA 47 kOhm PNP Silicon Bias Resistor Transistor - SC-75

PNP Bipolar Digital Transistor (BRT)

DTA143ZET1G PNP DIGITAL TRANSISTOR,100 MA 50V 4.7 KOHMS, RATIO OF 0.1,3-PIN SC-75

250mV@ 300¦ÌA,10mA PNP - Pre-Biased 300mW 6V 500nA 50V 100mA SC-75,SOT-416 1.6mm*800¦Ìm*750¦Ìm

ON SEMICONDUCTOR - DTA143ZET1G - BRT TRANSISTOR, 50V, 47K/4.7KOHM, SC75, FULL REEL

Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP

TRANS, AEC-Q101, PNP, -50V, -0.1A, SC-75; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.1(Ratio); RF Transistor Case: SC-75; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.