onsemi BCP56-16T1G

Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1 A, 1.5 W, SOT-223, Surface Mount

TRANSISTOR, BIPOLAR, SI, NPN, MEDIUM POWER, VCEO 80VDC, IC 1A, PD 1.5W, SOT-223,HFE 25

Bipolar junction transistor, NPN, 1 A, 80 ## Fehler ##, SMD, SOT-23, BCP56-16T1G

80V 1.5W 100@150mA,2V 1A NPN SOT-223 Bipolar Transistors - BJT ROHS

TRANS NPN 80V 1A SOT-223 / Trans GP BJT NPN 80V 1A 1500mW 4-Pin(3+Tab) SOT-223 T/R

1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 100 to 250

Bipolar Transistors (BJT); BCP56-16T1G; ON SEMICONDUCTOR; NPN; 4; 80 V; 1 A

ON Semiconductor BCP56-16T1G Transistor NPN 80V 1A TO-220 Epitaxial Silicon

BCP Series 80 V 1.5 A Surface Mount NPN Silicon Epitaxial Transistor - SOT-223

Bipolar Transistors - BJT 1A 100V NPN

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin

General Purpose Transistors NPN Ic=1A Vceo=80V hfe=100~250 P=1.5W SOT223

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Bipolar Transistor, Npn, 80V, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi BCP56-16T1G.

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 25 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 130 / Power Dissipation (Pd) W = 1.5 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1 / Reflow Temperature Max. °C = 260