onsemi BC856BLT1Gの詳細は販売業者から提供されます。
Bipolar (BJT) Single Transistor, General Purpose, PNP, 65 V, 100 mA, 225 mW, SOT-23, Surface Mount
ON SEMI BC856BLT1G PNP BIPOLAR TRANSISTOR, 0.1 A, 65 V, 3-PIN SOT-23
65V 300mW 220@2mA,5V 100mA PNP SOT-23(TO-236) Bipolar Transistors - BJT ROHS
TRANS PNP 65V 0.1A SOT23 / Trans GP BJT PNP 65V 0.1A 300mW 3-Pin SOT-23 T/R
BC Series 65 V 100 mA SMT PNP Silicon General Purpose Transistor - SOT-23
onsemi PNP Transistor, SOT-23, SMD, -100mA Ic, -65V Vceo
Transistor PNP 65V 100mA hfe220 SOT23
RS APAC
onsemi PNPTransistor, SOT-23encapsulation, SMD mount, Maximum DC collector current-100 mA, maximum collector-emission voltage-65 V
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -65V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 225mW; DC Collector Current: -100mA; DC Current Gain hFE: 100hFE; Transistor C
Bipolar Transistor, Pnp -65V Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BC856BLT1G.
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = -100 / Collector-Emitter Voltage (Vceo) V = -65 / DC Current Gain (hFE) = 290 / Collector-Base Voltage (Vcbo) V = -80 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) W = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = -0.3 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = -0.7 / Reflow Temperature Max. °C = 260