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Bipolar Transistor Array, Complementary NPN and PNP, 65 V, 65 V, 100 mA, 100 mA, 380 mW
Bipolar Transistors (BJT); BC846BPDW1T1G; ON SEMICONDUCTOR; NPN, PNP; 6; 65 V; 100 mA
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon
BC846 Series 65 V 100 mA SMT NPN/PNP Complementary Transistor - SOT-363
600mV@ 5mA,100mA 1 NPN,1 PNP 380mW 6V@ NPN,5V@ PNP 15nA 80V 65V 100mA SOT-363 2mm*1.25mm*1.1mm
General Purpose Transistors NPN,PNP Ic=100mA Vceo=65V hfe=200~475 P=380mW SOT363
100 mA 65 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
Trans GP BJT NPN/PNP 65V 0.1A 380mW 6-Pin SC-88 T/R
65V 380mW 200@2mA,5V 100mA 1PCSNPN&1PCSPNP SOT-323-6 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT 100mA 80V Dual Complementary
Transistors - Bipolar (BJT) - Arrays 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) 1 (Unlimited) Surface Mount NPN, PNP -55°C~150°C TJ 600mV @ 5mA, 100mA 200 @ 2mA 5V 15nA ICBO TRANS NPN/PNP 65V 0.1A SOT363
TRANSISTOR, BIPOL, NPN/PNP, 65V, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 65V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
Transistor Npn/Pnp Dual 65V Sot-363, Full Reel; Transistor Polarity:Npn, Pnp; Collector Emitter Voltage Max Npn:65V; Collector Emitter Voltage Max Pnp:65V; Continuous Collector Current Npn:100Ma; Power Dissipation Npn:380Mw Rohs Compliant: Yes |Onsemi BC846BPDW1T1G.