onsemi 2N7000

Transistor MOSFET N Channel 60 Volt 0.2 Amp 3 Pin TO-92 Bulk

ON SEMICONDUCTOR - 2N7000 - MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

MOSFET;N-Ch;VDSS 60VDC;RDS(ON) 5 Ohms;ID 200mA;TO-92 (TO-226);PD 350mW;-55degc

N-Channel MOSFET, Enhancement Mode, 60V, 200mA, 5 Ω

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

Mosfet, N-Ch, 60V, 0.2A, To-226Aa; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:200Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V Rohs Compliant: Yes |Onsemi 2N7000.

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.