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onsemiKSC2330OBU
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 70 @ 20mA 10V 100nA ICBO 1W 50MHz
説明
Nexperia PHE13003C,126の詳細は販売業者から提供されます。
Power Bipolar Transistor, 1.5A I(C), 1-Element, NPN
Trans GP BJT NPN 400V 1.5A 2100mW 3-Pin SPT Ammo
PHE13003C/TO-92/STANDARD MARKI
NOW WEEN - PHE13003C - POWER BIP
Npn Power Transistor, 400 V, 1.5 A, 3-To-92; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:400V; Dc Collector Current:1.5A; Power Dissipation Pd:2.1W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Product Range:-Rohs Compliant: Yes
メーカーの別名
Nexperiaは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Nexperia は以下の名前でも知られているかもしれません：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
技術仕様
Physical
Case/PackageTO-226-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight453.59237 mg
Technical
Collector Base Voltage (VCBO)700 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Voltage (VCEO)400 V
Element ConfigurationSingle
hFE Min5
Max Breakdown Voltage400 V
Max Collector Current1.5 A
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape (CT)
PolarityNPN
Power Dissipation2.1 W
Dimensions
Height6.35 mm
Length6.35 mm
Width6.35 mm