価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BC856BW,135 | 0 | 70K | 2d | ||||||||
| Esaler Electronic | BC856BW,135 | 1 | 7d | |||||||||
| Easev | BC856BW,135 | 809 | >1wk | |||||||||
| Aztech | BC856BW,135 | 7,246 | 17h | |||||||||
| UnikeyIC | BC856BW,135 | 1,567 | 225 | Tape & Reel | 2h |
代替部品
Price @ 1000
$ 0.031
$ 0.034
$ 0.034
Stock
307,817
3,935,542
3,935,542
Authorized Distributors
1
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-323
SC
SC
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
65 V
65 V
65 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
650 mV
650 mV
650 mV
hFE Min
220
220
220
Power Dissipation
200 mW
150 mW
150 mW
サプライチェーン
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1993-10-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
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説明
Nexperia BC856BW,135の詳細は販売業者から提供されます。
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
Transistor GP BJT PNP 65V 0.1A 3-Pin SC-70 T/R
65 V, 100 mA PNP general-purpose transistor
BC856BW Series 65 V 100 mA PNP Surface Mount Silicon Transistor - SOT-323
メーカーの別名
Nexperiaは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Nexperia は以下の名前でも知られているかもしれません：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
技術仕様
Physical
Case/PackageSOT-323
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage650 mV
Collector Emitter Voltage (VCEO)65 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min220
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation200 mW
Transition Frequency100 MHz