価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BC846B,215 | 204,000 | 3K | 2d | ||||||||
| Arrow Electronics | BC846B,215 | 10 | 1 | |||||||||
| TME | BC846B.215 | 102,946 | 1 | 10h | ||||||||
| Newark | BC846B,215 | 0 | 5 | Cut Tape | ||||||||
| RFMW | BC846B,215 | 0 | 3K | 23h |
CADモデル
製造元 Nexperia BC846B,215 のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
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代替部品
Price @ 1000
$ 0.024
$ 0.031
$ 0.031
Stock
45,199,486
15,986,237
15,986,237
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
65 V
65 V
65 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
600 mV
600 mV
600 mV
hFE Min
200
200
200
Power Dissipation
250 mW
300 mW
300 mW
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date1993-03-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
説明
Nexperia BC846B,215の詳細は販売業者から提供されます。
Single Bipolar Transistor, NPN, 65 V, 100 mA, 250 mW, SOT23 (TO-236AB), 3 Pins, Surface Mount
Transistor General Purpose BJT NPN 65 Volt 0.1A Automotive 3-Pin TO-236AB
Bipolar Junction Transistors - BJT; NEXPERIA; BC846B, 215; NPN; 3; 65 V; 100 mA
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
General Purpose Transistors VCEO=65V VEBO=6V IC=100mA NPN SOT23 110~450
Trans GP BJT NPN 65V 0.1A 250mW 3-Pin SOT-23 T/R
100 mA 65 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain Max (hfe):290 ;RoHS Compliant: Yes
TRANSISTOR, NPN, REEL 3K; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:500mW; DC Collector Current:100mA; DC Current Gain hFE:290; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC846B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:200; No. of Transistors:1; Noise Factor Max:10dB; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Ptot Max:250mW; Reel Quantity:3000; SMD Marking:1B; Tape Width:8mm; Termination Type:SMD; Voltage Vcbo:80V
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 450 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900
メーカーの別名
Nexperiaは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Nexperia は以下の名前でも知られているかもしれません：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
技術仕様
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)65 V
Current100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min200
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation250 mW
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage65 V
Dimensions
Height1.1 mm
Length3 mm
Width1.4 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
準拠ステートメント