代替部品
Price @ 1000
$ 27.265
$ 25.02
Stock
13,561
24,858
Authorized Distributors
2
1
Mount
Through Hole
Through Hole
Case/Package
TO-3
TO-3
Drain to Source Voltage (Vdss)
-
100 V
Continuous Drain Current (ID)
38 A
38 A
Threshold Voltage
-
2 V
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
150 W
150 W
Input Capacitance
-
-
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-29
Lifecycle StatusProduction (Last Updated: 4 months ago)
説明
Infineon JANTX2N6764の詳細は販売業者から提供されます。
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package, TO-204AE-2
Infineon SCT
Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-204AE
Single N-Channel 100 V 0.055 Ohm 125 nC 150 W SMT Hexfet Transistor TO-3
38 A 100 V 0.065 ohm N-CHANNEL Si POWER MOSFET TO-204
Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Terminals2
Technical
Continuous Drain Current (ID)38 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance65 mΩ
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance100 mΩ
Power Dissipation150 W
Schedule B8541290080