Infineon IRLU2703PBF

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.045Ohm;ID 23A;I-Pak (TO-251AA);PD 45W

Single N-Channel 30 V 45 W 15 nC Hexfet Power Mosfet Through Hole - TO-251AA

30V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

HEXFET Power MOSFET Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 45 W

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

MOSFET, N, 30V, 22A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:38W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:23A; Junction to Case Thermal Resistance A:3.3°C/W; On State resistance @ Vgs = 10V:45mohm; Package / Case:IPAK; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:96A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V